PART |
Description |
Maker |
BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc. STMicroelectronics
|
2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS) From old datasheet system HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION) From old datasheet system SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
2SD2584 EE08394 |
HIGH POWER SWITCHING APPLICATIONS From old datasheet system NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
|
http:// TOSHIBA[Toshiba Semiconductor]
|
2SJ528 2SJ528L 2SJ528S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
LTC1430ISPBF LTC1430-15 |
High Power Step-Down Switching Regulator Controller Isolated Flyback Switching Regulator with 9V Output SWITCHING CONTROLLER, 300 kHz SWITCHING FREQ-MAX, PDSO16
|
Linear Technology, Corp.
|
GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http:// TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MP4501 |
N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
MP4401 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS / HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
|
Toshiba Semiconductor
|
LTC1697 LTC1697EMS LTC1697EMSPBF |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS High Efficiency Low Power 1W CCFL Switching Regulator
|
LINEAR TECHNOLOGY CORP
|
MP441007 MP4410 |
High Power, High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|